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Revelation of the dislocations in the C-face of 4H-SiC substrates using a microwave plasma etching treatment
Affiliation of Author(s):晶体材料研究院
Journal:CrystEng Comm
First Author:欧阳俊
Indexed by:Unit Twenty Basic Research
Document Code:C8AAD6E1796B4EB4B2D502DEF34AFBEF
Volume:23
Issue:2
Page Number:353
Translation or Not:no
Date of Publication:2021-01-14