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Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
Release Time:2025-01-15| Hits:
Institution:新一代半导体材料研究院
Title of Paper:Multi-Step junction termination extension design and simulation study for 4H-SiC Schottky barrier diode
Journal:物理结果
First Author:Wang, Xinyu
Document Code:1806576901185818626
Volume:62
Number of Words:5000
Translation or Not:No
Date of Publication:2024-07
Release Time:2025-01-15
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