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一种高性能GaN MIS-HEMT的制备方法
2024-05-18  Hits:

Affilication of Author(s):新一代半导体材料研究院
Type of Patent:发明
Application Number:202310437073.6
Number of Inventors:8
Service Invention or Not:no
Application Date:2023-04-18
Publication Date:2024-02-02
Authorization Date:2024-02-02
Publication Date:2024-02-02
Application Date:2023-04-18
Authorization Date:2024-02-02