钟宇
Click:
The Last Update Time:..
Patents
一种基于ScAlN介质层的InAlN/GaN MIS-HEMT及其制备方法
Release Time:2024-05-31| Hits:
Title:一种基于ScAlN介质层的InAlN/GaN MIS-HEMT及其制备方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202210196597.6
Number of Inventors:8
Service Invention or Not:No
Application Date:2022-03-02
Publication Date:2024-05-28
Authorization Date:2024-05-28
Release Time:2024-05-31
Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University