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一种基于ScAlN介质层的InAlN/GaN MIS-HEMT及其制备方法
2024-05-31 Hits:
Affilication of Author(s):新一代半导体材料研究院
Type of Patent:发明
Application Number:202210196597.6
Number of Inventors:8
Service Invention or Not:no
Application Date:2022-03-02
Publication Date:2024-05-28
Authorization Date:2024-05-28
Publication Date:2024-05-28
Application Date:2022-03-02
Authorization Date:2024-05-28
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