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一种GaN HEMTs及降低器件欧姆接触阻值的方法
2024-06-13 Hits:
Affilication of Author(s):新一代半导体材料研究院
Type of Patent:发明
Application Number:202310430500.8
Number of Inventors:8
Service Invention or Not:no
Application Date:2023-04-18
Publication Date:2024-06-11
Authorization Date:2024-06-11
Publication Date:2024-06-11
Application Date:2023-04-18
Authorization Date:2024-06-11
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