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一种GaN HEMTs及降低器件欧姆接触阻值的方法
Release Time:2024-06-13| Hits:
Title:一种GaN HEMTs及降低器件欧姆接触阻值的方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202310430500.8
Number of Inventors:8
Service Invention or Not:No
Application Date:2023-04-18
Publication Date:2024-06-11
Authorization Date:2024-06-11
Release Time:2024-06-13
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