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测量SiC MOSFET沟道近界面陷阱密度的方法
Release Time:2025-06-12| Hits:
Title:测量SiC MOSFET沟道近界面陷阱密度的方法
Institution:新一代半导体材料研究院
Type of Patent:Invent
Application Number:202411603552.1
Number of Inventors:5
Service Invention or Not:No
Application Date:2024-11-12
Publication Date:2025-03-07
Authorization Date:2025-03-07
Release Time:2025-06-12
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