教授
博士生导师
硕士生导师
性别：男
出生日期：1962-10-21
毕业院校：山东大学
学历：硕士研究生毕业
学位：博士生
在职信息：在职
所在单位：晶体材料研究院
入职时间：1986-07-01
学科：物理化学
无机化学
材料物理与化学
材料学
电子邮箱：bbhuang@sdu.edu.cn
访问量：
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[201]
马法豪.
One-step synthesis of Co-doped 1T-MoS2 nanosheets with efficient and stable HER activity in alkaline solutions.
MATERIALS CHEMISTRY AND PHYSICS Journal,
244,
2020.
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[202]
仝凤霞.
Plasmon-induced dehydrogenation of formic acid on Pd-dotted Ag@Au hexagonal nanoplates and single-particle study.
应用催化-b,
277,
2020.
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[203]
马法豪.
Ni3B as a highly efficient and selective catalyst for the electrosynthesis of hydrogen peroxide.
应用催化-b,
279,
2020.
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[204]
张婷.
Two-Dimensional Ferroelastic Semiconductors in Nb2SiTe4 and Nb2GeTe4 with Promising Electronic Properties.
Journal of Physical Chemistry Letters,
11,
497,
2020.
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[205]
彭瑞.
Self-doped p-n junctions in two-dimensional In2X3 van der Waals materials.
MATERIALS HORIZONS,
7,
504,
2020.
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[206]
彭瑞.
Intrinsic anomalous valley Hall effect in single-layer Nb3I8.
PHYSICAL REVIEW B,
102,
2020.
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[207]
梁岩.
High-temperature quantum anomalous Hall insulator in two-dimensional Bi2ON.
APPLIED PHYSICS LETTERS Journal,
116,
2020.
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[208]
彭瑞.
Stacking-dependent topological phase in bilayer MBi2Te4 (M = Ge, Sn, Pb).
PHYSICAL REVIEW B,
101,
2020.
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[209]
申世英.
Intrinsic triferroicity in a two-dimensional lattice.
PHYSICAL REVIEW B,
103,
2021.
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[210]
张婷.
Ferroelastic-ferroelectric multiferroics in a bilayer lattice.
PHYSICAL REVIEW B,
103,
2021.
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[211]
梁岩.
Intercorrelated ferroelectrics in 2D van der Waals materials.
MATERIALS HORIZONS,
2021.
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[212]
赵佩.
Single-layer LaBr2: Two-dimensional valleytronic semiconductor with spontaneous spin and valley polarizations.
APPLIED PHYSICS LETTERS Journal,
115,
2019.
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[213]
张婷.
Direction-control of anisotropic electronic behaviors via ferroelasticity in two-dimensional alpha-MPI (M = Zr, Hf).
MATERIALS HORIZONS,
6,
1930,
2019.
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[214]
梁岩.
Out-of-plane ferroelectricity and multiferroicity in elemental bilayer phosphorene, arsenene, and antimonene.
APPLIED PHYSICS LETTERS,
118,
2021.
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[215]
申世英.
Single-Layer BI: A Multifunctional Semiconductor with Ferroelectricity, Ultrahigh Carrier Mobility, and Negative Poisson's Ratio.
physical review applied,
15,
2021.
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[216]
彭瑞.
Single-Layer Ag2S: A Two-Dimensional Bidirectional Auxetic Semiconductor.
Nano Letters,
19,
1227,
2019.
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[217]
牛成旺.
Antiferromagnetic Topological Insulator with Nonsymmorphic Protection in Two Dimensions.
Physical Review Letters,
124,
2020.
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[218]
王昊.
A magnetic topological insulator in two-dimensional EuCd2Bi2: giant gap with robust topology against magnetic transitions.
MATERIALS HORIZONS,
8,
956,
2021.
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[219]
牛成旺.
Quantum anomalous Hall effect and gate-controllable topological phase transition in layered EuCd2As2.
PHYSICAL REVIEW B,
99,
2019.
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[220]
胡相婷.
Quantum spin Hall effect in antiferromagnetic topological heterobilayers.
PHYSICAL REVIEW B,
103,
2021.
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