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胡小波

职称：教授
所在单位：晶体材料研究院

教师拼音名称：huxiaobo
入职时间：1997-09-01
所在单位：晶体材料研究院
性别：男
在职信息：在职
是否在职：1

论文成果

[121] 胡小波. Relationship between appearance crystalline planes and growth temperatures during sublimation growth of AlN crystals. Journal of crystal growth, 2006.
[122] 胡小波. Development of bulk SiC single crystal grown by physical vapor transport method. Optical Materials, 2003.
[123] 胡小波. 同步辐射单色光形貌术观察6H-SiC单晶中的微管缺陷. 《人工晶体学报》, 33, 332, 2004.
[124] 胡小波. Comparison of Different Crucible Materials for the Growth of AlN Crystals. 《结构化学》, 2007.
[125] 胡小波. BN坩埚中的AIN单晶生长. 《人工晶体学报》, 2006.
[126] 胡小波. AlN单晶生长研究进展. 《人工晶体学报》, 2005.
[127] 胡小波. 6H-SiC单晶的生长与缺陷. 硅酸盐学报, 2003.
[128] 彭燕 , 徐现刚 and 胡小波. Combustion synthesis of high purity SiC powder by radio-frequency heating. Ceramics International, 2013.
[129] 陈秀芳 , 徐现刚 , 胡小波 and 彭燕. Thermal conductivity of 4H-SiC single crystals. Journal of applied physics, 2013.
[130] 彭燕 , 陈秀芳 , 徐现刚 and 胡小波. Characterization of Electrical Properties of n-Type 4H-SiC Single Crystals by Raman Spectroscopy. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013.
[131] 徐现刚 and 胡小波. Hierarchical Porous Patterns of n-type 6HeSiC Crystals via Photoelectrochemical Etching. Journal of material science and technology, 2013.
[132] 胡小波. SiC 衬底上生长的 GaN 外延层的高分辨 X 射线衍射分析. 《人工晶体学报》, 2014.
[133] 徐现刚 and 胡小波. Anomalous Resistivity in Vanadium-Doped Semi-Insulating 4H-SiC wafers. Acta Metallurgica Sinica (English Letters), 2014.
[134] 胡小波. Initial formation stage and succedent biomineralization of pearls. MATERIALSCHARACTERIZATION, 2014.
[135] 彭燕 , 徐现刚 and 胡小波. 以（1015）面为籽晶的6H -SiC单晶生长与缺陷研究. 《人工晶体学报》, 39, 287, 2010.

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