Paper Publications
- [9] 冀子武. Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures. Superlattices Microstruct, 2022.
- [10] 冀子武. 荧光法测定半导体禁带宽度的探讨. 物 理 学 报, 2022.
- [11] 冀子武. Effect of low-temperature interlayer in active-region upon photoluminescence in multiple-quantum-well InGaN/GaN. Journal of Luminescence, 2022.
- [12] 屈尚达. Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer. Chin. Phys. B, 2022.
- [13] 时凯居. Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells. Materials Express, 11, 2033, 2021.
- [14] 李睿. Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures. Superlattices and Microstructures, 160, 2021.
- [15] 李睿. Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*. Chin. Phys. B, 30, 2021.
- [16] 冀子武. N型掺杂ZnSe/BeTeⅡ型量子阱中空间间接带电激子跃迁发光的直接证据. 人 工 晶 体 学 报, 2021.
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