Ji Ziwu
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Paper Publications
- [17] 屈尚达. Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer. Chin. Phys. B, 2022.
- [18] 时凯居. Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells. Materials Express, 11, 2033, 2021.
- [19] 李睿. Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures. Superlattices and Microstructures, 160, 2021.
- [20] 李睿. Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*. Chin. Phys. B, 30, 2021.
- [21] 冀子武. N型掺杂ZnSe/BeTeⅡ型量子阱中空间间接带电激子跃迁发光的直接证据. 人 工 晶 体 学 报, 2021.
- [22] 时凯居. Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction. JOURNAL OF LUMINESCENCE Journal, 223, 2020.
- [23] 时凯居. Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure. Physica E-Low-Dimensional Systems & Nanostructures, 119, 2020.
- [24] 李长富. Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate. Scientific Reports, 10, 2020.
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