Ji Ziwu
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Paper Publications
- [17] 冀子武. N型掺杂ZnSe/BeTeⅡ型量子阱中空间间接带电激子跃迁发光的直接证据. 人 工 晶 体 学 报, 2021.
- [18] 时凯居. Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction. JOURNAL OF LUMINESCENCE Journal, 223, 2020.
- [19] 时凯居. Effect of InGaN growth interruption on photoluminescence properties of an InGaN-based multiple quantum well structure. Physica E-Low-Dimensional Systems & Nanostructures, 119, 2020.
- [20] 李长富. Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate. Scientific Reports, 10, 2020.
- [21] 李长富. "Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation. Materials Express, 10, 140, 2020.
- [22] xumingsheng , xuxiangang , Ji Ziwu and 李长富. Photoluminescence properties of blue and green multiple InGaN/GaN quantum wells. Chin. Phys. B, 2019.
- [23] Ji Ziwu , xumingsheng , xuxiangang and 徐兴连. Enhanced localisation effect and reduced quantum-confined Stark effect of carriers in InGaN/GaN multiple quantum wells embedded in nanopillars. Journal of Luminescence, 203, 216, 2018.
- [24] weizhixian , Ji Ziwu , pangzhiyong , hanshenghao and 戴成虎. Room temperature ferromagnetic and optical properties of rare earth Sm-doped tris(8-hydroxyquinoline) gallium thin films. Thin Solid Films, 648, 113, 2018.
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