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教师个人主页
Influence of Ni Schottky contact area on two-dimensional electron-gas sheet carrier concentration of strained AlGaN/GaN heterostructures. Journal of applied physics, 99,2005.
林兆军.The influence of Schottky contact metals on the strain of AlGaN barrier layers. Journal of applied physics, 103:044503 -1,2008.
Effect of polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors. Modern Physics Letters B, 30,2016.
？Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ？Superlattices and Microstructures , 100,2016.
Effect of Polarization Coulomb field scattering on low temperature electron mobility in strained AlGaN/AlN/GaN heterostructure field-effect transistors . Modern Physics Letters B, 30,2015.
Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ？Superlattices and Microstructures, 100,2015.
？Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ？Superlattices and Microstructures , 100,2015.
？Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors . ？Superlattices and Microstructures , 100,2015.
？Study of Gate Width Influence on Extrinsic Transconductance in AlGaN/GaN Heterostructure Field-Effect Transistors With Polarization Coulomb Field Scattering . ？IEEE TRANSACTIONS ON ELECTRON DEVICES, 63,2016.
？Study of source access resistance at direct current quiescent points for AlGaN/GaN heterostructure field-effect transistor. ？JOURNAL OF APPLIED PHYSICS , 119,2016.
