教授
性别：男
在职信息：在职
所在单位：集成电路学院
入职时间：2003-12-08
访问量：
最后更新时间：..
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[1]
王鸣雁.
Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fT.
IEEE Electron Device Letters,
2023.
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[2]
周衡.
Study on the frequency characteristics of split-gate AlGaN/GaN HFETs.
Modern Physics Letters B,
2023.
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[3]
王鸣雁.
A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETs.
IEEE Transactions on Electron Devices,
1-5,
2023.
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[4]
周衡.
Study of electrical transport properties of GaN-based side-gate heterostructure transistors.
Applied Physics Letters,
2022.
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[5]
王鸣雁.
Monte Carlo Investigation of High-Field Electron Transport Properties in AlGaN/GaN HFETs.
IEEE Electron Device Letters,
2022.
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[6]
刘阳.
A submicron split-gate AlGaN/GaN heterostructure field-effect transistor for class-A common-source voltage amplifier applications.
Micro and Nanostructures,
2022.
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[7]
杨勇雄.
Influence of Polarization Coulomb Field Scattering on the Sub-60 mV/dec Switching of AlGaN/GaN HFETs.
IEEE Transactions on Electron Devices,
69,
63,
2022.
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[8]
刘阳.
A split-gate AlGaN/GaN heterostructure field-effect transistor with an auxiliary gate.
AIP ADVANCES,
12,
2022.
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[9]
Liu, Yan.
Comparison of ratio of gate length to gate-drain distance influences on source access resistance of AlGaN/AlN/GaN HFETs at different temperatures.
MICROELECTRONIC ENGINEERING,
247,
2021.
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[10]
李亚萍.
An Artificial Neural Network Assisted Optimization System for Analog Design Space Exploration.
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS,
2640,
2020.
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[11]
李云鹏.
Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors.
IEEE Electron Device Letters,
24,
208,
2018.
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[12]
姜光远.
The mechanism of the enhanced intensity for polarization Coulomb field scattering in AlN/GaN heterostructure field effect transistors with submicron gate length.
Solid-State Electronics,
186,
2021.
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[13]
姜光远.
The influence of polarization Coulomb field scattering on the parasitic source resistance of E-mode P-GaN/AlGaN/GaN heterostructure field-effect transistors.
Applied Physics A: Materials Science and Processing,
127,
2021.
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[14]
刘阳.
A novel AlGaN/GaN heterostructure field-effect transistor based on open-gate technology.
SCIENTIFIC REPORTS,
11,
2021.
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[15]
姜光远.
The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors.
Superlattices and Microstructures,
156,
2021.
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[16]
姜光远.
The influence of Al composition in AlGaN barrier layer on polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors.
Physica E-Low-Dimensional Systems & Nanostructures,
127,
2021.
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[17]
杨勇雄.
Simulation of the effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field effect transistors using the Monte Carlo method.
AIP ADVANCES,
11,
2021.
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[18]
李云鹏.
Ambipolar SnO<inf>x</inf>thin-film transistors achieved at high sputtering power.
Applied Physics Letters,
27,
2018.
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[19]
李云鹏.
Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays.
IEEE Transactions on Electron Devices,
66,
950,
2019.
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[20]
崔鹏.
Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors.
Physica E-Low-Dimensional Systems & Nanostructures,
119,
2020.
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