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周衡.Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistorsGuti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics,2023.
王鸣雁.Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETsApplied Physics Letters,2024.
王鸣雁.Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETsApplied Physics Letters,2024.
范宝财.Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistorsAIP Advances,2024.
王鸣雁.Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETsIEEE ACCESS,2024.
Jiang, Guangyuan.Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack. SOLID-STATE ELECTRONICS, 201,2023.
王鸣雁.Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fTIEEE Electron Device Letters,2023.
周衡.Study on the frequency characteristics of split-gate AlGaN/GaN HFETsModern Physics Letters B,2023.
王鸣雁.A Hybrid Simulation Technique to Investigate Bias-Dependent Electron Transport and Self-Heating in AlGaN/GaN HFETsIEEE Transactions on Electron Devices:1-5,2023.
周衡.Study of electrical transport properties of GaN-based side-gate heterostructure transistorsApplied Physics Letters,2022.
