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陈思衡.High Breakdown Voltage P-GaN Gate HEMTs With Threshold Voltage of 7.1 V. IEEE Electron Device Letters, 12:2343,2024.
罗鑫.Enhanced device performance of GaN high electron mobility transistors with in situ crystalline SiN cap layer. APPLIED PHYSICS LETTERS, 125,2024.
周衡.Study of electrical transport properties in split-gate AlGaN/GaN heterostructure field-effect transistorsGuti Dianzixue Yanjiu Yu Jinzhan/Research & Progress of Solid State Electronics,2023.
王鸣雁.Impact of electron velocity modulation on microwave power performance for AlGaN/GaN HFETsAPPLIED PHYSICS LETTERS,2024.
王鸣雁.Bias-dependent electron velocity and short-channel effect in scaling sub-100？nm InAlN/GaN HFETsAPPLIED PHYSICS LETTERS,2024.
范宝财.Polarized Coulomb field scattering in LaAlO3/SrTiO3 heterojunction field-effect transistorsAIP Advances,2024.
王鸣雁.Modeling of the Gate Bias-Dependent Velocity–Field Relationship and Physics-Based Current-Voltage Characteristics in AlGaN/GaN HFETsIEEE ACCESS,2024.
Jiang, Guangyuan.Influence of polarization Coulomb field scattering on the electrical properties of normally-off recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor with ALD-Al2O3 gate dielectric stack. SOLID-STATE ELECTRONICS, 201,2023.
王鸣雁.Bias-Dependent Electron Velocity Extracted From AlGaN/GaN HFETs and Its Impact on gm and fTIEEE Electron Device Letters,2023.
周衡.Study on the frequency characteristics of split-gate AlGaN/GaN HFETsModern Physics Letters B,2023.
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