LeoO8nVP1DPAxNBixY6w9zxw9Qzj0cv3xrSo8nOLET6QmdG5XWl4yxSYmi45
LI Yuan

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Postgraduate (Doctoral)

Shandong University

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Date of Employment:2017-12-26

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Yuan Li > Scientific Research > Paper Publications

Strain engineered C-31 field-effect-transistors: a new strategy to break 60 mV/decade by using electron injection from intrinsic isolated states

Release Time:2021-10-17 Hits:

Institution:信息科学与工程学院
Journal:Applied Physics Express
First Author:汪倩文
Document Code:E64EDFE506234FD6A2B34B729E361DAD
Volume:14
Issue:7
Number of Words:3
Translation or Not:No
Date of Publication:2021-07

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