LI Yuan

Doctor

Postgraduate (Doctoral)

Shandong University

Personal Information:

Gender:Male
Date of Employment:2017-12-26

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Yuan Li > Scientific Research > Paper Publications

Impacts of atomistic surface roughness on electronic transport in n-type and p-type MoS2 field-effect transistors

Date of Publication:2019-11-01 Hits:

Affiliation of Author(s):信息科学与工程学院
Journal:JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
First Author:马晓雷
Document Code:A410E6F528C245DC9A7DA51CF50BE6DD
Volume:58
Issue:11
Number of Words:3
Translation or Not:no
Date of Publication:2019-11-01

Pre One:Semiconducting Silicene: A Two-Dimensional Silicon Allotrope with Hybrid Honeycomb-Kagome Lattice

Next One:Strain engineered C-31 field-effect-transistors: a new strategy to break 60 mV/decade by using electron injection from intrinsic isolated states

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