Affiliation of Author(s):信息科学与工程学院
Journal:IEEE Transactions on Electron Devices
Key Words:Field-effect transistors (FETs);hybrid honeycomb-kagome (hhk)-silicene;scaling limit;steep-slope;sub-5 nm
First Author:桑鹏鹏
Document Code:1539149533830766593
Volume:69
Issue:6
Page Number:3494-3498
Number of Words:3
Translation or Not:no
Date of Publication:2022-06-01