Electronic Transport across the Grain Boundary of Poly-Si Channel in 3D NAND Flash Memory: A Theoretical Perspective
Date of Publication:2021-01-01 Hits:
Affiliation of Author(s):信息科学与工程学院
First Author:鲁飞
Document Code:1478212213612220418
Page Number:41-42
Number of Words:3
Translation or Not:no
Date of Publication:2021-01-01