Institution:信息科学与工程学院
Journal:5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021
Key Words:Manufacture;Transition metals;Calculation results;Channel length;Double-gate fets;Electrical equivalent;Field effect transistor (FETs);First principle calculations;Technology nodes;Transition metal dichalcogenides
First Author:王菲
Document Code:1478205738357624834
Number of Words:3
Translation or Not:No
Date of Publication:2021-04