Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering
Date of Publication:2024-01-29 Hits:
Affiliation of Author(s):信息科学与工程学院
Journal:APPLIED PHYSICS LETTERS
First Author:刘坤一
Document Code:B46A3DC4AF274ED6974E6D915BF1672F
Volume:124
Issue:5
Translation or Not:no
Date of Publication:2024-01-29
