XPxsTFDdORCbtNlMsDLjW6wUxKlKOH3Dsn5Q0epEIwOowNNiAlADba0OCcyY
LI Yuan

Doctor

Postgraduate (Doctoral)

Shandong University

Recommended MA Supervisor

Personal Information

Gender:Male
Date of Employment:2017-12-26

VIEW MORE

Other Contact Information

Email :


Yuan Li > Scientific Research > Paper Publications

On a Mott formalism for modeling oxide thin-film transistors

Release Time:2024-10-18 Hits:

Institution:信息科学与工程学院
Journal:APPLIED PHYSICS LETTERS
First Author:伊光政
Document Code:2F1D84913D454F00AF0A13597564A717
Issue:3
Number of Words:4000
Translation or Not:No
Date of Publication:2024-07

Prev One:Impact of Density of States on the Characteristics of Channel-All-Around InGaZnO Field-Effect Transistors

Next One:Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering

Copyright All Rights Reserved Shandong University Address: No. 27 Shanda South Road, Jinan City, Shandong Province, China: 250100
Information desk: (86) - 0531-88395114
On Duty Telephone: (86) - 0531-88364731 Construction and Maintenance: Information Work Office of Shandong University

Click:  | The Last Update Time:..  | Login | SDU