LI Yuan

Doctor

Postgraduate (Doctoral)

Shandong University

Personal Information:

Gender:Male
Date of Employment:2017-12-26

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Yuan Li > Scientific Research > Paper Publications

On a Mott formalism for modeling oxide thin-film transistors

Date of Publication:2024-07-15 Hits:

Affiliation of Author(s):信息科学与工程学院
Journal:APPLIED PHYSICS LETTERS
First Author:伊光政
Document Code:2F1D84913D454F00AF0A13597564A717
Issue:3
Number of Words:4000
Translation or Not:no
Date of Publication:2024-07-15

Next One:Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering

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