1.2 kV-class Vertical GaN Power MOSFETs with Monolithically Integrated Freewheeling Merged P-i-N Schottky Diodes
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发表刊物:14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17
全部作者:Heng Wang,Sihao Chen
第一作者:Yuchuan Ma
通讯作者:Chao Liu
是否译文:否
发表时间:2023-11-01
发表时间:2023-11-01