645 V Quasi-Vertical GaN Power Transistors on silicon substrates
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发表刊物:30th IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, USA, May 13-17
全部作者:Riyaz Abdul Khadar
通讯作者:Chao Liu,Elison Matioli
是否译文:否
发表时间:2018-05-01
发表时间:2018-05-01
附件:645_V_quasi-vertical_GaN_power_transistors_on_silicon_substrates.pdf 下载[] 次