山东大学教师主页林兆军论文成果中文主页

登录首页返回 English

教师个人主页

论文成果

返回中文主页

林兆军 and 崔鹏.Effect of gate-source spacing on parasitic source access resistance in AlGaN/GaN heterostructure field-effect transistors. Applied Physics A-Materials Science & Processing, 124,2018.
周莉, 杨再兴, 林兆军, 王卿璞, 宋爱民, 李云鹏 and 辛倩.Ambipolar SnOx thin-film transistors achieved at high sputtering power. APPLIED PHYSICS LETTERS, 112,2018.
宋爱民, 王一鸣, 林兆军, 周莉, 辛倩 and 李云鹏.Complementary Integrated Circuits Based on p-Type SnO and n-Type IGZO Thin-Film Transistors. IEEE Electron Device Letters, 39:208,2017.
林兆军, 程爱杰 and 付晨.The influence of the PCF scattering on the electrical properties of the AlGaN/AlN/GaN HEMTs after the Si3N4 surface passivation. Applied Physics A-Materials Science & Processing, 124,2018.
程爱杰, 林兆军 and 崔鹏.Improved Linearity with Polarization Coulomb Field Scattering in AlGaN/GaN Heterostructure Field-Effect Transistors. Scientific Reports, 8,2018.
林兆军 and 崔鹏.Effect of polarization Coulomb field scattering on device linearity in AlGaN/GaN heterostructure field-effect transistors. JOURNAL OF APPLIED PHYSICS, 122,2017.
刘艳 and 林兆军.Parasitic source resistance at different temperatures for AlGaN/AlN/GaN heterostructure field-effect transistors. Chinese Physics B, 26,2017.
林兆军 and 刘艳.Influence of the gate position on source-to-drain resistance in AlGaN/AlN/GaN heterostructure field-effect transistors. AIP Advances, 7,2017.
林兆军 and 崔鹏.A method to determine electron mobility of the two-dimensional electron gas in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 110:289,2017.
程爱杰, 林兆军 and 刘欢.Enhanced effect of diffused Ohmic contact metal atoms for device scaling in AlGaN/GaN heterostructure field-effect transistors. Superlattices and Microstructures, 103:113,2017.

共 188 条 5/19

首页上一页下一页尾页页

版权所有 ©山东大学　地址：中国山东省济南市山大南路27号　邮编：250100　
查号台：（86）-0531-88395114
值班电话：（86）-0531-88364731　建设维护：山东大学信息化工作办公室　　开通时间：-- 访问量：最后更新时间：--