山东大学教师主页 LI Yuan Impacts of Operation Intervals on Program Disturb in 3D Charge-trapping Triple-level-cell (TLC) NAND Flash Memory Yuan Li

Yuan Li > Scientific Research > Paper Publications

Impacts of Operation Intervals on Program Disturb in 3D Charge-trapping Triple-level-cell (TLC) NAND Flash Memory

Release Time:2023-05-18 Hits:

Institution:信息科学与工程学院
Journal:5th IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
Key Words:3D NAND flash;operation intervals;program disturb;lateral charge migration
First Author:方晓彤
Document Code:1478212210961420289
Number of Words:3
Translation or Not:No
Date of Publication:2021-04

Prev One:Positive Bias Temperature Instabilities in Vertical Gate-all-around poly-Si Nanowire Field-effect Transistors

Next One:Deep insights into the failure mechanisms in field-cycled ferroelectric Hf0.5Zr0.5O2Thin Film: TDDB characterizations and first-principles calculations

Home

Scientific Research

Teaching Research

Awards and Honours

Enrollment Information

Student Information

My Album

Blog

Recommended MA Supervisor

Personal Information

Other Contact Information

Impacts of Operation Intervals on Program Disturb in 3D Charge-trapping Triple-level-cell (TLC) NAND Flash Memory