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LI Yuan

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Postgraduate (Doctoral)

Shandong University

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Date of Employment:2017-12-26

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Yuan Li > Scientific Research > Paper Publications

Positive Bias Temperature Instabilities in Vertical Gate-all-around poly-Si Nanowire Field-effect Transistors

Release Time:2023-05-18 Hits:

Institution:信息科学与工程学院
Journal:IEEE International Conference on Integrated Circuits, Technologies and Applications (IEEE ICTA)
Key Words:GAA poly-Si Nanowire FETs;PBTI;trap charging
First Author:杨文静
Document Code:1395264523660693505
Page Number:175-176
Number of Words:3
Translation or Not:No
Date of Publication:2018-11

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