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教师个人主页
肖洪地, 栾彩娜, 马瑾, 林兆军, 宗福建 and 张锡健.采用射频磁控溅射法在Si (111) 衬底上生长β-Ga2O3 薄膜. 《功能材料》, v 37:1,2006.
冯先进, 肖洪地, 栾彩娜, 马瑾 and 赵伟.Deposition and characterization of epitaxial Ta-doped TiO2 films for ultraviolet photoelectric detectors. Ceramics International, 44:21114,2018.
马瑾, 栾彩娜 and 冯先进.Preparation and characterization of Al2xIn22xO3 films deposited on MgO (10 0) by MOCVDMaterials Research Bulletin,2015.
马瑾, 冯先进, 肖洪地 and 栾彩娜.Structural and optical properties of anatase TiO2 heteroepitaxial films prepared by MOCVDJournal of crystal growth,2016.
栾彩娜, 韩琳, 冯先进 and 徐伟东.High Performance Thin Film Transistors With Sputtered In-Al-Zn-O Channel and Different Source/Drain Electrodes. IEEE Electron Device Letters, 40:247,2019.
栾彩娜, 马瑾, 肖洪地 and 曹得重.Fabrication and properties of high quality InGaN-based LEDs with highly reflective nanoporous GaN mirrors. Photonics research, 6:1144,2018.
栾彩娜 and 马瑾.Preparation and characterization of single crystalline SnO2 films deposited on TiO2(0 0 1) by MOCVD. Journal of crystal growth, 318:599,2011.
栾彩娜, 刘建强, 马瑾 and 肖洪地.Fabrication and properties of wafer-scale nanoporous GaN distributed Bragg reflectors with strong phase-separated InGaN/GaN layers. Journal of Alloys and Compounds, 789:658,2019.
毛宏志, 栾彩娜, 刘建强, 马瑾 and 肖洪地.Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM. Journal of Electronic Materials , 48:3036,2019.
栾彩娜 and 马瑾.Characterization of tunable band gap aluminum indium oxide films prepared on SiO2 (0001) by MOCVDJournal of Materials Science: Materials in Electronics,2016.
