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彭燕

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性别：女

在职信息：在职

所在单位：晶体材料研究院

入职时间：2011-08-16

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[81] 陈秀芳 , 彭燕 , 徐现刚 and 胡小波. Physical vapor transport growth of 4H-SiC on {000-1} vicinal surfaces. Materials science forum, 2015.
[82] 徐现刚 , 彭燕 and 胡小波. Characterization of Nitrogen-Boron doped 4H-SiC substrates. International Journal of ELECTROCHEMICAL, 2013.
[83] 胡小波 , 王翎 , 彭燕 and 徐现刚. 硅粉形貌对人工合成高纯碳化硅粉料的影响. 《功能材料》, 39, 1989, 2008.
[84] 徐现刚 , 彭燕 and 胡小波. Stacking faults in semi-polar 6H-SiC single crystals. Crystal Research and Technology, 36, 357, 2011.
[85] 彭燕 , 胡小波 , 徐现刚 , 蒋民华 and 陈秀芳. Growth of wafer size Graphene on SiC Substrates. Materials science forum, 687, 90, 2011.
[86] 陈秀芳 , 彭燕 , 胡小波 , 徐现刚 and 杨祥龙. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attach. CrystEngComm, 20, 6957, 2018.
[87] 胡小波 , 陈秀芳 , 彭燕 , 杨祥龙 , 徐现刚 and 肖龙飞. Effect of periodic array on the on-state resistances of GaAs photoconductive semiconductor switch ba. AIP Advances, 7, 2017.
[88] 彭燕 , 徐现刚 and 胡小波. 6H-SiC成核表面形貌与缺陷产生的研究. 《人工晶体学报》, 38, 7, 2009.
[89] 陈秀芳 , 彭燕 , 胡小波 and 徐化勇. Progress in research of GaN-based LEDs fabricated on SiC substrate. Chin. Phys. B, 2015.
[90] 杨祥龙 , 彭燕 , 胡小波 , 徐现刚 and 陈秀芳. 高质量N 型SiC 单晶生长及其器件应用. 《人工晶体学报》, 2015.
[91] 彭燕 , 徐现刚 and 胡小波. Combustion synthesis of high purity SiC powder by radio-frequency heating. Ceramics International, 2013.
[92] 彭燕 , 徐现刚 and 胡小波. 以（1015）面为籽晶的6H -SiC单晶生长与缺陷研究. 《人工晶体学报》, 39, 287, 2010.
[93] 彭燕 , 陈秀芳 , 胡小波 , 徐现刚 and 谢雪健. Synthesis and characterization of high quality {100} diamond single crystal. Journal of Materials Science-Materials in Electronics, 28, 9813, 2017.
[94] 陈秀芳 , 彭燕 , 胡小波 , 徐现刚 and 杨祥龙. Selective-area lateral epitaxial overgrowth of SiC by controlling the supersaturation in sublimation. CrystEngComm, 20, 1705, 2018.
[95] 彭燕 , 陈秀芳 , 徐现刚 and 胡小波. Characterization of Electrical Properties of n-Type 4H-SiC Single Crystals by Raman Spectroscopy. ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2013.
[96] 彭燕 , 陈秀芳 , 胡小波 , 徐现刚 and 谢雪健. Anharmonic effect on first-order Raman modes of p-type 6H-SiC single crystals. JOURNAL OF ALLOYS AND COMPOUNDS, 691, 1033, 2017.
[97] 陈秀芳 , 胡小波 , 徐现刚 and 彭燕. 高质量半绝缘150 mm 4H-SiC 单晶生长研究. 《人工晶体学报》, 2016.
[98] 徐现刚 and 彭燕. Temperature and doping dependence of the Raman scattering in 4H-SiC. optical material express, 2016.
[99] 胡小波 and 彭燕. Anharmonic effect on first-order Raman modes of p-type 6H-SiC. JOURNAL OF ALLOYS AND COMPOUNDS, 2016.
[100] 陈秀芳 , 徐现刚 , 胡小波 and 彭燕. Thermal conductivity of 4H-SiC single crystals. Journal of applied physics, 2013.

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