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彭燕

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性别：女

在职信息：在职

所在单位：晶体材料研究院

入职时间：2011-08-16

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当前位置中文主页 >> 科学研究 >> 论文成果

[1] Ge, Lei. High-Performance Diamond Phototransistor with Gate Controllable Gain and Speed. Journal of Physical Chemistry Letters, 14, 592, 2023.
[2] 胡国杰. Improvement of the resistivity uniformity of 8-inch 4H–SiC wafers by optimizing the thermal field. VACUUM, 222, 2024.
[3] 胡秀飞. Growth of 2-inch diamond films on 4H–SiC substrate by microwave plasma CVD for enhanced thermal per. VACUUM, 211, 2023.
[4] 熊希希. 低位错密度8英寸导电型碳化硅单晶衬底制备. Journal of Inorganic Materials, 1-2, 2023.
[5] 田佳奇. Origins and characterization techniques of stress in SiC crystals: A review. PROGRESS IN CRYSTAL GROWTH AND CHARACTERIZATION OF MATERIALS, 2024.
[6] 王兴龙. Hot-zone design and optimization of resistive heater for SiC single crystal growth. JOURNAL OF MATERIALS SCIENCE Journal, 2024.
[7] 仲光磊. Growth of p-type 4H-SiC single crystals by physical vapor transport using p-type SiC powder. CrystEng Comm, 7690, 2022.
[8] 李华东. Investigation on dislocation and deflection morphology of PVT-grown on-axis 4H-SiC crystals. Journal of Physics D: Applied Physics, 2022.
[9] 陈秀芳. Research progress of large size SiC single crystal materials and devices. Light science applications, 2023.
[10] 杨祥龙. 8 英寸导电型 4H-SiC 单晶的生长. 《人工晶体学报》, 2022.
[11] 李晓蒙. Correlation between the response performance of epitaxial graphene/ SiC UV-photodetectors and the nu. Carbon, 2021.
[12] 王希玮. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor depos. MATERIALS TODAY COMMUNICATIONS, 2022.
[13] 段鹏. 用于MPCVD 金刚石薄膜生长的高表面质量HTHP 金刚石的制备. 《材料导报》, 2021.
[14] 段鹏. Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond. MATERIALS, 2019.
[15] 段鹏. Surface Morphology of the Interface Junction of CVD Mosaic Single-Crystal Diamond. MATERIALS, 2019.
[16] 王鹤静. Micropipes in SiC Single Crystal Observed by Molten KOH Etching. Materials, 2021.
[17] 段鹏. 用于MPCVD金刚石薄膜生长的高表面质量HTHP金刚石的制备. 《材料导报》, 2021.
[18] 肖龙飞. Effect of electron avalanche breakdown on a high-purity semi-insulating 4H-SiC photoconductive semic. Applied Optics, 2804, 2018.
[19] 杨祥龙. Basal plane bending of 4H-SiC single crystals grown by sublimation method with different seed attach. CRYSTENGCOMM, 6957, 2018.
[20] 胡秀飞. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposi. MATERIALS TODAY COMMUNICATIONS, 2022.

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