宋爱民
(教授)
599
教授
博士生导师
硕士生导师
性别：男
毕业院校：山东大学
学历：研究生(博士)毕业
学位：博士生
在职信息：在职
所在单位：微电子学院
办公地点：软件园校区
电子邮箱：songam@sdu.edu.cn
访问量：
最后更新时间：..
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[21]
纪兴启.
Amorphous Ga2O3 Schottky photodiodes with high-responsivity and photo-to-dark current ratio,.
JOURNAL OF ALLOYS AND COMPOUNDS ,
2023.
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[22]
纪兴启.
High-Performance Thin Film Transistors with Sputtered IGZO/Ga2O3 Heterojunction.
IEEE Transactions on Electron Devices,
2022.
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[23]
颜世琪.
Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors based on β-Ga2O3 (100) surface.
APPLIED SURFACE SCIENCE,
2023.
-
[24]
.
A thin-film transistor with no apparent channel for simplified, high aperture ratio pixel architectures.
JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY,
765,
2022.
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[25]
林晓昱.
High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized AlxOy.
IEEE Transactions on Electron Devices,
537,
2022.
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[26]
林晓昱.
Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics.
Semiconductor Science and Technology,
35023,
2023.
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[27]
Tianye Duan.
A graphene-nanoribbon-based thermoelectric generator.
CARBON,
2023.
-
[28]
冯明明.
Active metal-graphene hybrid terahertz surface plasmon polaritons.
NANOPHOTONICS,
11,
3331-3338,
2022.
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[29]
王萌发.
Frequency Division Multiplexer With Directional Filters in Multilayer LCP Films at E- and W-Band.
《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》,
2022.
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[30]
张嘉炜.
High performance Schottky diodes based on indium-gallium-zinc-oxide.
Journal of Vacuum Science & Technology A,
34,
2016.
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[31]
张翼飞.
Tunable Surface Plasmon Polaritons with Monolithic Schottky Diodes.
ACS Applied Electronic Materials,
2124,
2019.
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[32]
葛磊.
Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer.
Crystals,
12,
2022.
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[33]
ZHANG Jiawei.
Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.
NATURE COMMUNICATIONS,
6,
7561,
2015.
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[34]
ZHANG Jiawei.
Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes.
Applied physics letters,
107,
2015.
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[35]
辛倩.
Study of Breakdown Voltage of Indium-Gallium-Zinc-Oxide-Based Schottky Diode.
APPLIED PHYSICS LETTERS,
106,
113506,
2015.
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[36]
Jiawei Zhang.
Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics.
Applied Physics Letters,
108,
263503,
2016.
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[37]
Ma, Xiaochen.
A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors.
Scientific Reports,
7,
2017.
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[38]
Zhang, Jiawei.
High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.
Materials,
10,
2017.
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[39]
李云鹏.
Extremely Sensitive Dependence of SnOx Film Properties on Sputtering Power.
Scientific Reports,
6,
36183,
2016.
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[40]
严林龙.
High performance InGaZnO-based Schottky diodes fabricated at room temperature.
Physica Status Solidi C,
2015.
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