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[21] 王珣珣. Enhancement-mode Ga2O3 FET with high mobility using p-type SnO heterojunction. IEEE Electron Device Letters, 43, 44-47, 2022.
[22] 纪兴启. Amorphous Ga2O3 Thin-Film Phototransistors for Imaging and Logic Illustration. IEEE Electron Device Letters, 2023.
[23] 纪兴启. Amorphous Ga2O3 Schottky photodiodes with high-responsivity and photo-to-dark current ratio,. JOURNAL OF ALLOYS AND COMPOUNDS , 2023.
[24] 纪兴启. High-Performance Thin Film Transistors with Sputtered IGZO/Ga2O3 Heterojunction. IEEE Transactions on Electron Devices, 2022.
[25] 颜世琪. Anisotropic performances and bending stress effects of the flexible solar-blind photodetectors based on β-Ga2O3 (100) surface. Applied Surface Science, 2023.
[26] . A thin-film transistor with no apparent channel for simplified, high aperture ratio pixel architectures. JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 765, 2022.
[27] 林晓昱. High-Performance 1-V IGZO Thin-Film Transistors Gated With Aqueous and Organic Electrolyte-Anodized AlxOy. IEEE Transactions on Electron Devices, 537, 2022.
[28] 林晓昱. Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics. Semiconductor Science and Technology, 35023, 2023.
[29] Tianye Duan. A graphene-nanoribbon-based thermoelectric generator. CARBON, 2023.
[30] 冯明明. Active metal-graphene hybrid terahertz surface plasmon polaritons. NANOPHOTONICS, 11, 3331-3338, 2022.
[31] 王萌发. Frequency Division Multiplexer With Directional Filters in Multilayer LCP Films at E- and W-Band. 《IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS》, 2022.
[32] 张嘉炜. High performance Schottky diodes based on indium-gallium-zinc-oxide. Journal of Vacuum Science & Technology A, 34, 2016.
[33] 张翼飞. Tunable Surface Plasmon Polaritons with Monolithic Schottky Diodes. ACS Applied Electronic Materials, 2124, 2019.
[34] 葛磊. Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer. Crystals, 12, 2022.
[35] ZHANG Jiawei. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz. NATURE COMMUNICATIONS, 6, 7561, 2015.
[36] ZHANG Jiawei. Low-frequency noise properties in Pt-indium gallium zinc oxide Schottky diodes. APPLIED PHYSICS LETTERS, 107, 2015.
[37] 辛倩. Study of Breakdown Voltage of Indium-Gallium-Zinc-Oxide-Based Schottky Diode. APPLIED PHYSICS LETTERS, 106, 113506, 2015.
[38] Jiawei Zhang. Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics. Applied Physics Letters, 108, 263503, 2016.
[39] Ma, Xiaochen. A Sputtered Silicon Oxide Electrolyte for High-Performance Thin-Film Transistors. Scientific Reports, 7, 2017.
[40] Zhang, Jiawei. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors. Materials, 10, 2017.

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