8batm0ZCiRnqTTOb8Xgn2Ya5Ylhnt9UDqGu3Hj74ierkHQ95XCbf0TiemzU2
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Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

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Institution:物理学院

Title of Paper:Ten States of Nonvolatile Memory through Engineering Ferromagnetic Remanent Magnetization

Journal:Advanced functional materials

First Author:钟海

All the Authors:Bai Lihui,Shishou Kang,颜世申,田玉峰,Yanxue Chen

Document Code:542BD7C4BF1F48B1B0CB63A521201124

Volume:29

Issue:2

Translation or Not:No

Date of Publication:2019-01

Release Time:2019-10-22

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