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Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

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Institution:物理学院

Title of Paper:Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

Journal:NANOSCALE

First Author:田玉峰

All the Authors:Shishou Kang,Yanxue Chen,刘国磊,颜世申,梅良模,田玉峰

Document Code:lw-168573

Volume:7

Page Number:6334

Number of Words:3

Translation or Not:No

Date of Publication:2015-03

Release Time:2019-10-24

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