location: Current position: Home >> Scientific Research >> Paper Publications

Field-Free Magnetization Switching in a Ferromagnetic Single Layer through Multiple Inversion Asymmetry Engineering

Hits:

Affiliation of Author(s):物理学院

Journal:ACS nano

First Author:黄启坤

Document Code:6D31FEECB5C846399E9F26F2EC93932A

Issue:8

Page Number:12462

Number of Words:5

Translation or Not:no

Date of Publication:2022-08-23

Pre One:Voltage control of magnetic properties in GdxFe100-x films by hydrogen migration

Next One:Programmable Spin-Orbit Torque Multistate Memory and Spin Logic Cell