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杨再兴 ( 教授 ) 赞
个人主页 http://faculty.sdu.edu.cn/yangzaixing/zh_CN/index.htm
教授博士生导师硕士生导师

论文成果当前位置：中文主页 >> 科学研究 >> 论文成果

[151] 杨再兴 and Hua Zhang. Enhanced room temperature ferromagnetism in Co-doped ZnO mediated by interstitial H. Materials letters, 2012.
[152] 杨再兴 and Ying Wang. Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD .... Nanoscale research letters, 2016.
[153] 杨再兴 and Li-Fan Shen. High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics. 2015.
[154] 杨再兴 and 韩宁. Crystal Orientation Controlled Photovoltaic Properties of Multilayer GaAs Nanowire Arrays. 2016.
[155] 杨再兴 and 孙嘉敏. Recent Advances in Group III–V Nanowire Infrared Detectors. Advanced Optical Materials, 2018.
[156] 杨再兴 and Wang, Fengyun. Manipulating III-V Nanowire Transistor Performance via Surface Decoration of Metal-Oxide Nanopart.... Advanced Materials Interfaces, 4, 2017.
[157] 辛倩 , 周莉 , 杨再兴 , 林兆军 , 王卿璞 , 宋爱民 and 李云鹏. Ambipolar SnOx thin-film transistors achieved at high sputtering power. Applied physics letters, 112, 2018.
[158] 杨再兴 , 辛倩 , 宋爱民 and 梁广大. Improved performance of InSe field-effect transistors by channel encapsulation. Semiconductor Science and Technology, 33, 2018.
[159] 杨再兴 and Han, Ning. Controllable III-V nanowire growth via catalyst epitaxy. JOURNAL OF MATERIALS CHEMISTRY C, 5, 2017.
[160] 杨再兴. GaAs Nanowires: From Manipulation of Defect Formation to Controllable Electronic Transport Proper.... 2013.
[161] 杨再兴. Tunable Electronic Transport Properties of Metal-Cluster-Decorated III-V Nanowire Transistors . 2013.
[162] 杨再兴. Carbon doping of InSb nanowires for high-performance p-channel field-effect-transistors. 2013.
[163] 杨再兴. Crystalline GaSb Nanowires Synthesized on Amorphous Substrates: From the Formation Mechanism to p.... 2013.
[164] 杨再兴. Controllable synthesis, characterization, and growth mechanism of hollow ZnxCd1-xS spheres genera.... 2013.
[165] 杨再兴. Enhanced room temperature ferromagnetism in hydrogenated Zn0.98Mn0.02O . 2013.

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