Design Strategy of Vertical GaN Power SBDs with p-GaN JTE and Experimental Demonstration of Selective p-Doping by Implantation
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发表刊物：Physica Status Solidi A: Applications and Materials Science
摘要：We systematically investigate the impact of the key structural parameters on the breakdown characteristics of the vertical GaN power Schottky barrier diodes (SBDs) with p-GaN junction termination extension (JTE) structures by numerical simulation. With a p-type GaN structure incorporated at the edge of the Schottky junction, the electric field crowding at the edge of Schottky anode can be alleviated, effectively avoiding the premature breakdown of the devices. We found that the acceptor concentration, thickness, width, and surface charge density of the incorporated JTE are closely associated with the electric field distribution and the reverse breakdown characteristics. The vertical SBDs with optimum p-GaN JTE parameters feature a dramatic improvement in Baliga's Figure of Merit (BFOM), without obvious degradation in the forward and dynamic performance. Selective p-doping and acceptor activation is also demonstrated, which verifies the fabrication feasibility of the proposed JTE structures. The results can pave the way for the design and fabrication of high performance GaN vertical power devices towards high-voltage, high-power and high-speed applications.
全部作者：Sihao Chen,Heng Wang,Man Hoi Wong
第一作者：Hang Chen
论文类型：期刊论文
通讯作者：Chao Liu
是否译文：否
发表时间：2024-03-01
收录刊物：SCI
发表时间：2024-03-01