Improved hole injection efficiency in AlGaN DUV LEDs with minimized band offset at the p-EBL/hole supplier interface
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发表刊物：14th International Conference on Nitride Semiconductors (ICNS-14), Fukuoka, Japan, Nov. 12-17
全部作者：Wentao Tian,Mengran Liu,Shuti Li
通讯作者：Chao Liu
是否译文：否
发表时间：2023-11-01
发表时间：2023-11-01