Title of Paper:InAlN/GaN HEMT on Si with fmax = 270 GHz
Journal:IEEE Transactions on Electron Devices
First Author:Peng Cui
Correspondence Author:Yuping Zeng
All the Authors:Meng Jia,Hang Chen,Guangyang Lin,Jie Zhang,Lars Gundlach,John Q. Xiao
Volume:68
Issue:3
Page Number:994
DOI Number:10.1109/TED.2021.3049316
Translation or Not:No
Date of Publication:2021-03
Included Journals:SCI
Release Time:2021-11-27