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InAlN/GaN HEMT on Si with fmax = 270 GHz
  • Journal:
    IEEE Transactions on Electron Devices
  • All the Authors:
    Meng Jia,Hang Chen,Guangyang Lin,Jie Zhang,Lars Gundlach,John Q. Xiao
  • First Author:
    Peng Cui
  • Indexed by:
    Journal paper
  • Correspondence Author:
    Yuping Zeng
  • Volume:
    68
  • Issue:
    3
  • Page Number:
    994
  • Translation or Not:
    no
  • Included Journals:
    SCI
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