Title of Paper:RF simulation of self-aligned T-shape S/D contact InAs MOSFET on silicon
Journal:Solid-State Electronics
First Author:Qi Cheng
Correspondence Author:Yuping Zeng
All the Authors:Peng Cui,Sourabh Khandelwal
Volume:172
Page Number:107885
DOI Number:10.1016/j.sse.2020.107885
Translation or Not:No
Date of Publication:2020-09
Included Journals:SCI
Release Time:2021-11-29