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碳化硅混合3C-SiC接触PN结肖特基二极管及制备方法

Release Time:2024-05-18| Hits:

Title:碳化硅混合3C-SiC接触PN结肖特基二极管及制备方法

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202311453784.9

Number of Inventors:4

Service Invention or Not:No

Application Date:2023-11-03

Publication Date:2024-03-01

Authorization Date:2024-03-01

Release Time:2024-05-18

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