Patents
一种基于ScAlN介质层的InAlN/GaN MIS-HEMT及其制备方法
  • Affilication of Author(s):
    新一代半导体材料研究院
  • Type of Patent:
    发明
  • Application Number:
    202210196597.6
  • Number of Inventors:
    8
  • Service Invention or Not:
    no
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