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集成SBD的SiC衬底上增强型GaN HEMT器件

Release Time:2024-07-02| Hits:

Title:集成SBD的SiC衬底上增强型GaN HEMT器件

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202410423858.2

Number of Inventors:4

Service Invention or Not:No

Application Date:2024-04-10

Publication Date:2024-06-11

Authorization Date:2024-06-11

Release Time:2024-07-02

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一种增强型GaN HEMT器件结构和制造方法
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