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基于GaN HEMT结终端的SiC肖特基二极管

Release Time:2024-08-22| Hits:

Title:基于GaN HEMT结终端的SiC肖特基二极管

Institution:新一代半导体材料研究院

Type of Patent:Invent

Application Number:202410559014.0

Number of Inventors:4

Service Invention or Not:No

Application Date:2024-05-08

Publication Date:2024-08-06

Authorization Date:2024-08-06

Release Time:2024-08-22

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