Enhancement of On-State Current in Two-Dimensional Tunnel Field Effect Transistors by Computational Designof Interfacial vander Waals Defect States
发布时间：2026-05-31 点击数：
所属单位：信息科学与工程学院
论文名称：Enhancement of On-State Current in Two-Dimensional Tunnel Field Effect Transistors by Computational Designof Interfacial vander Waals Defect States
发表刊物：ACS Applied Nano Materials
第一作者：王隆昊
论文编号：B5C8AA269CEA4E5380DEAD4A3FC9646A
卷号：8
期号：50
页面范围：24057
字数：5
是否译文：否
发表时间：2025-12