- 暂无内容
- 伊光政. On a Mott formalism for modeling oxide thin-film transistors. APPLIED PHYSICS LETTERS, 2024.
- 刘坤一. Bias-independent subthreshold swing in ballistic cold-source field-effect transistors by drain density-of-states engineering. APPLIED PHYSICS LETTERS, 124, 2024.
- . A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN EnhancedType High-Electron-Mobility Transistor. ACS Applied Electronic Materials, 6, 3857, 2024.
- 李鑫鸣. Toward Nanoscale Organic Tunnel Field-Effect Transistors with Small Subthreshold Swing and High On-State Current: A Computational Design Based on Two-Dimensional Covalent-Organic Frameworks. ACS Applied Nano Materials, 7, 1526, 2024.
- 伊光政. On a Mott formalism for modeling oxide thin-film transistors. APPLIED PHYSICS LETTERS, 125, 2024.
- 暂无内容
- 暂无内容
- 暂无内容