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Professor Supervisor of Doctorate Candidates Supervisor of Master's Candidates

Paper Publications

[61] liuguolei , yanshishen and tianyufeng. Oxygen vacancies controlled multiple magnetic phases in epitaxial single crystal Co0.5(Mg0.55Zn0..... scientific reports, 6, 24188-1, 2016.
[62] yanshishen , linzhaojun , Shishou Kang , Yanxue Chen , liuguolei , meiliangmo and tianyufeng. Large rectification magnetoresistance in nonmagnetic Al/Ge/Al heterojunctions. scientific reports, 2015.
[63] weilin , Yanxue Chen , tianyufeng , yanshishen , meiliangmo and 尉国栋. Reversible control of the magnetization of spinel ferrites based electrodes by lithium-ion migrat.... scientific reports, 7, 2017.
[64] meiliangmo , tianyufeng , yanshishen , Yanxue Chen , liuguolei , Shishou Kang and 王静. Electrically tunable tunneling rectification magnetoresistance in magnetic tunneling junctions wi.... NANOSCALE, 9, 16073, 2017.
[65] daiyouyong , xiaoshuqin , yanshishen , Shishou Kang and tianyufeng. Superparamagnetism, magnetoresistance and anomalous Hall effect in amorphous MnxSi1-x semiconduct.... JOURNAL OF ALLOYS AND COMPOUNDS, 623, 438, 2014.
[66] liuguolei , meiliangmo , tianyufeng , Yanxue Chen and yanshishen. High T-C ferromagnetism of Zn(1-x)CoxO diluted magnetic semiconductors grown by oxygen plasma-ass.... Applied physics letters, 90, 052504-1, 2007.
[67] xiaoshuqin , Shishou Kang , tianyufeng and yanshishen. Hydrogen enhanced magnetization and exchange interaction in. JOURNAL OF ALLOYS AND COMPOUNDS, 658, 98, 2016.
[68] tianyufeng and Shishou Kang. Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky device.... Scientific Reports, 6, 37748, 2016.
[69] tianyufeng , Shujun Hu , Yanxue Chen , liuguolei , daiyouyong , meiliangmo , yanshishen and Shishou Kang. Decoupled scenario between the conductive carriers and the ferromagnetism in epitaxial Zn0.852xMg.... APPLIED PHYSICS LETTERS, 105, 072404, 2014.
[70] tianyufeng , yanshishen , Shujun Hu and meiliangmo. Oxide magnetic semiconductors: Materials, properties, and devices. Chinese Physics B, 22, 088505, 2013.

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