徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
- [21] 俞瑞仙. Ultrawide-bandgap semiconductor AlN crystals: growth and applications. 材料化学期刊C, 9, 1852, 2021.
- [22] 张嘉炜. Extremely high-gain source-gated transistors. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 116, 4843, 2019.
- [23] 李长富. "Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation. Materials Express, 10, 140, 2020.
- [24] 李长富. Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate. Scientific reports, 10, 2020.
- [25] 时凯居. Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction. JOURNAL OF LUMINESCENCE Journal, 223, 2020.
- [26] 徐明升. Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer. 《OPTOELECTRONICS LETTERS》, 2020.
- [27] 郭亚楠. Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection. Nanotcchnology, 32, 2021.
- [28] 赵帅. In Situ Growth of GeS Nanowires with Sulfur-Rich Shell for Featured Negative Photoconductivity. Journal of Physical Chemistry Letters, 12, 3046, 2021.
- [29] 俞瑞仙. Ultrawide-bandgap semiconductor AlN crystals: growth and applications. journal of materials chemistry C, 1852, 2021.
- [30] xumingsheng. Study of the Dislocation and Luminescence Intensity Distributions of Gallium Nitride LED on the Carbon-Nanotubes Patterned Sapphire Substrate. INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE, 2014.