徐明升
+
Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
- [21] 刘东. Thickness-dependent highly sensitive photodetection behavior of lead-free all-inorganic CsSnBr3 nanoplates. RARE METALS Journal, 41, 1753, 2022.
- [22] 刘磊. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN. CrystEngComm, 7245, 2021.
- [23] 杜路路. High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO. IEEE Transactions on Electron Devices, 40, 4326, 2018.
- [24] 俞瑞仙. Ultrawide-bandgap semiconductor AlN crystals: growth and applications. 材料化学期刊C, 9, 1852, 2021.
- [25] 张嘉炜. Extremely high-gain source-gated transistors. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 116, 4843, 2019.
- [26] 李长富. "Double-W-shaped" temperature dependence of emission linewidth in an InGaN/GaN multiple quantum well structure with intense phase separation. Materials Express, 10, 140, 2020.
- [27] 李长富. Wave-shaped temperature dependence characteristics of the electroluminescence peak energy in a green InGaN-based LED grown on silicon substrate. Scientific Reports, 10, 2020.
- [28] 时凯居. Photoluminescence properties of InGaN/GaN multiple quantum wells containing a gradually changing amount of indium in each InGaN well layer along the growth direction. JOURNAL OF LUMINESCENCE Journal, 223, 2020.
- [29] 徐明升. Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer. 《OPTOELECTRONICS LETTERS》, 2020.
- [30] 郭亚楠. Ambipolar transport in Ni-catalyzed InGaAs nanowire field-effect transistors for near-infrared photodetection. Nanotcchnology, 32, 2021.