徐明升
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Gender:Male
Education Level:Postgraduate (Postdoctoral)
Alma Mater:Shandong University
Paper Publications
- [11] 葛磊. Enhancement Mode Ga2O3 Field Effect Transistor with Local Thinning Channel Layer. Crystals, 12, 2022.
- [12] 王希玮. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition. MATERIALS TODAY COMMUNICATIONS, 2022.
- [13] 胡秀飞. Nucleation growth mechanism of diamond on 4H-SiC substrate by microwave plasma chemical vapor deposition. MATERIALS TODAY COMMUNICATIONS, 2022.
- [14] 徐明升. A Highly Responsive Hydrogen-Terminated Diamond-Based Phototransistor. IEEE Electron Device Letters, Vo.43, 1271, 2022.
- [15] 刘磊. Fabrication of a 2 inch free standing porous GaN crystal film and application in the growth of relaxed crack-free thick GaN. CRYSTENGCOMM, 23, 7245, 2021.
- [16] 冀子武. Effect of InGaN well layer growth rate upon photoluminescence of InGaN/GaN multiple-quantum-well structures. Superlattices Microstruct, 2022.
- [17] 屈尚达. Efficiency droop in InGaN/GaN-based LEDs with a gradually varying In composition in each InGaN well layer. Chinese Physics B, 2022.
- [18] 李睿. Combined effects of carrier scattering and Coulomb screening on photoluminescence in InGaN/GaN quantum well structure with high In content*. Chinese Physics B, 30, 2021.
- [19] 李睿. Emissions of the InGaN/GaN MQW LEDs with the InGaN well layer grown at different temperatures. Superlattices and Microstructures, 160, 2021.
- [20] 时凯居. Influence of in volatilization on photoluminescence in InGaN/GaN multiple quantum wells. Materials Express, 11, 2033, 2021.