标题:
Passively Q-Switched Nd:GdVO4 1.3 μm Laser with Few-Layered Black Phosphorus Saturable Absorber
点击次数:
所属单位:
晶体材料研究院(晶体材料全国重点实验室)
论文名称:
Passively Q-Switched Nd:GdVO4 1.3 μm Laser with Few-Layered Black Phosphorus Saturable Absorber
发表刊物:
IEEE Journal of Selected Topics in Quantum Electronics
关键字:
Black Phosphorus;Phosphorus;Pumping (laser);Q switching;Saturable absorbers;Black phosphorus;1.3 mu m;Short pulses
第一作者:
孙晓莉
论文编号:
1395293148996964353
卷号:
24
期号:
5
字数:
4
是否译文:
否
发表时间:
2018-09
发布时间:
2022-12-09