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Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate

Release Time:2021-11-27| Hits:

Title of Paper:Electrical properties of 90-nm InAlN/GaN HEMT on silicon substrate

Journal:Physica E: Low-dimensional Systems and Nanostructures

First Author:Peng Cui

Correspondence Author:Yuping Zeng

Volume:134

Page Number:114821

DOI Number:10.1016/j.physe.2021.114821

Translation or Not:No

Date of Publication:2021-05

Included Journals:SCI

Release Time:2021-11-27

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