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HZO/InAlN/GaN MIS-HEMT on Silicon with SS of 60 mV/dec and fT /fmax of 115/200 GHz

Release Time:2021-11-30| Hits:

Title of Paper:HZO/InAlN/GaN MIS-HEMT on Silicon with SS of 60 mV/dec and fT /fmax of 115/200 GHz

Journal:2021 Device Research Conference (DRC)

First Author:Peng Cui

Correspondence Author:Yuping Zeng

Translation or Not:No

Date of Publication:2021-06

Release Time:2021-11-30

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