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InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric
  • Journal:
    Japanese Journal of Applied Physics
  • All the Authors:
    Jie Zhang,Meng Jia,Guangyang Lin,Lincheng Wei,Haochen Zhao
  • First Author:
    Peng Cui
  • Correspondence Author:
    Yuping Zeng
  • Volume:
    59
  • Issue:
    2
  • Page Number:
    020901
  • Translation or Not:
    no
  • Included Journals:
    SCI
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