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InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric

Release Time:2021-11-27| Hits:

Title of Paper:InAlN/GaN MISHEMT with plasma enhanced atomic layer-deposited ZrO2 as gate dielectric

Journal:Japanese Journal of Applied Physics

First Author:Peng Cui

Correspondence Author:Yuping Zeng

All the Authors:Jie Zhang,Meng Jia,Guangyang Lin,Lincheng Wei,Haochen Zhao

Volume:59

Issue:2

Page Number:020901

DOI Number:10.35848/1347-4065/ab67de

Translation or Not:No

Date of Publication:2020-01

Included Journals:SCI

Release Time:2021-11-27

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