Title of Paper:Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors

Journal:Physica E: Low-dimensional Systems and Nanostructures

First Author:Peng Cui

Correspondence Author:Zhaojun Lin

All the Authors:Yuanjie Lv,Huan Liu,Aijie Cheng,Chongbiao Luan,Yang Zhou

Volume:119

Page Number:114027

DOI Number:10.1016/j.physe.2020.114027

Translation or Not:No

Date of Publication:2020-05

Included Journals:SCI

Release Time:2021-11-27