Paper Publications
Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
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Journal:
Physica E: Low-dimensional Systems and Nanostructures
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All the Authors:
Yuanjie Lv,Huan Liu,Aijie Cheng,Chongbiao Luan,Yang Zhou
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First Author:
Peng Cui
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Indexed by:
Journal paper
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Correspondence Author:
Zhaojun Lin
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Volume:
119
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Page Number:
114027
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Translation or Not:
no
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Included Journals:
SCI