Paper Publications
Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors
  • Journal:
    Physica E: Low-dimensional Systems and Nanostructures
  • All the Authors:
    Yuanjie Lv,Huan Liu,Aijie Cheng,Chongbiao Luan,Yang Zhou
  • First Author:
    Peng Cui
  • Indexed by:
    Journal paper
  • Correspondence Author:
    Zhaojun Lin
  • Volume:
    119
  • Page Number:
    114027
  • Translation or Not:
    no
  • Included Journals:
    SCI
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